Recent developments in GaN technology and its applications

Author: Giorgi Aroshvili
Keywords: Gallium Nitride, GaN
Annotation:

Gallium Nitride (GaN) based devices due to their inherent material properties are considered as one of the most promising set of devices to realize high power, high frequency transistors with lower power consumption in next-generation applications. The technology has matured dramatically over last decade, opening vast new opportunities for completely new applications, such as very high broadband power amplifiers and very high-efficiency designs. The state-of-the-art results for different transistor topologies are cited and their comparison analysis is given with respect to competing candidates for power MOSFET and other more recent markets.